CNY70 Reflective Optical Sensor with Transistor Output

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CNY70 Reflective Optical Sensor with Transistor Output
CNY70
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
Description
The CNY70 has a compact construction where the
emitting light source and the detector are arranged in
the same direction to sense the presence of an object
by using the reflective IR beam from the object.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.
Applications
94 9320
D Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc.
(optoelectronic
encoder
assemblies
for
transmission sensing).
Features
Marking aerea
D Compact construction in center-to-center spacing
of 0.1’
D No setting required
D High signal output
D Low temperature coefficient
D Detector provided with optical filter
D Current Transfer Ratio (CTR) of typical 5%
E
D
Top view
95 10930
Order Instruction
Ordering Code
CNY70
Sensing Distance
0.3 mm
Remarks
CNY70
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp ≤ 10 ms
Tamb ≤ 25°C
Symbol
VR
IF
IFSM
PV
Tj
Value
5
50
3
100
100
Symbol
VCEO
VECO
IC
PV
Tj
Value
32
7
50
100
100
Symbol
Ptot
Tamb
Tstg
Tsd
Value
200
–55 to +85
–55 to +100
260
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
Test Conditions
Tamb ≤ 25°C
Coupler
Parameter
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Test Conditions
Tamb ≤ 25°C
2 mm from case, t ≤ 5 s
Unit
V
mA
A
mW
°C
Unit
V
V
mA
mW
°C
Unit
mW
°C
°C
°C
CNY70
Vishay Semiconductors
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Test Conditions
IF = 50 mA
Symbol
VF
Min.
Typ.
1.25
Max.
1.6
Unit
V
Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 20 V, If = 0, E = 0
Symbol
VCEO
VECO
ICEO
Min.
32
5
Typ.
Max.
Unit
V
V
nA
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current
200
Coupler
Parameter
Collector current
Test Conditions
Symbol
Min.
Typ.
1)
VCE = 5 V, IF = 20 mA,
IC
0.3
1.0
d = 0.3 mm (figure 1)
Cross talk current
VCE = 5 V, IF = 20 mA
ICX2)
(figure 1)
Collector emitter satuIF = 20 mA, IC = 0.1 mA,
VCEsat1)
ration voltage
d = 0.3 mm (figure 1)
1) Measured with the ‘Kodak neutral test card’, white side with 90% diffuse reflectance
2) Measured without reflecting medium
Max.
Unit
mA
600
nA
0.3
V
Reflecting medium
(Kodak neutral test card)
d
~
~~
~
~~
Detector
Emitter
A
C
C
E
Figure 1. Test circuit
95 10808
CNY70
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
10
IC – Collector Current ( mA )
P tot – Total Power Dissipation ( mW )
300
Coupled device
200
Phototransistor
100
IR-diode
0
1
0.1
0.01
0.001
0
25
50
75
100
Tamb – Ambient Temperature ( °C )
95 11071
0.1
10
I C – Collector Current ( mA )
I F – Forward Current ( mA )
100.0
10.0
1.0
0.1
VF – Forward Voltage ( V )
20 mA
10 mA
5 mA
2 mA
0.1
1 mA
0.1
1
10
100
VCE – Collector Emitter Voltage ( V )
95 11066
Figure 6. Collector Current vs. Collector Emitter Voltage
1.5
1.1
1.0
0.9
0.8
0.7
0.6
CTR – Current Transfer Ratio ( % )
100.0
VCE=5V
IF=20mA
d=0.3
1.2
Kodak neutral card
(white side)
10.0
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
96 11913
IF = 50 mA
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 3. Forward Current vs. Forward Voltage
CTR rel – Relative Current Transfer Ratio
Kodak Neutral Card
(White Side)
d=0.3
0.01
0
1.3
100
10
Figure 5. Collector Current vs. Forward Current
1000.0
1.4
1
IF – Forward Current ( mA )
95 11065
Figure 2. Total Power Dissipation vs.
Ambient Temperature
96 11862
Kodak Neutral Card
(White Side)
d=0.3
VCE=5V
Tamb – Ambient Temperature ( °C )
Figure 4. Relative Current Transfer Ratio vs.
Ambient Temperature
1.0
VCE=5V
d=0.3
0.1
0.1
96 11914
1.0
10.0
100.0
IF – Forward Current ( mA )
Figure 7. Current Transfer Ratio vs. Forward Current
CNY70
Vishay Semiconductors
0°
10.0
I e rel – Relative Radiant Intensity
I c rel – Relative Collector Current
CTR – Current Transfer Ratio ( % )
IF=50mA
1mA
20mA
1.0
10mA
5mA
2mA
Kodak neutral card
(white side)
d=0.3
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.1
0.1
1.0
10.0
100.0
0.6
VCE – Collector Emitter Voltage ( V )
96 12001
0.4
0.2
0
0.2
0.4
0.6
95 11063
Figure 8. Current Transfer Ratio vs.
Collector Emitter Voltage
Figure 10. Relative Radiant Intensity/Collector Current vs.
Displacement
I C – Collector Current ( mA )
10
1
d
0.1
VCE=5V
IF=20mA
0.001
0
2
4
6
10
8
d – Distance ( mm )
95 11069
Figure 9. Collector Current vs. Distance
I Crel – Relative Collector Current
1.0
0.9
0.8
E
d = 5 mm
4 mm
3 mm
2 mm
1 mm
0
0.7
0.6
0.5
0.4
0
1.5
D
s
5mm
10mm
d
0
E
s
5mm
D
0.3
10mm
VCE = 5 V
IF = 20 mA
0.2
0.1
0
0
96 11915
1
2
3
4
5
6
7
8
s – Displacement ( mm )
Figure 11. Relative Collector Current vs. Displacement
9
10
11
CNY70
Vishay Semiconductors
Dimensions of CNY70 in mm
95 11345
CNY70
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

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